Automatic Design of Structural Parameters for GaN HEMT Using Genetic Algorithm and Artificial Neural Networks
Author:
Affiliation:
1. College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications,Nanjing,China,210023
Funder
National Natural Science Foundation of China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx8/10616249/10617469/10617532.pdf?arnumber=10617532
Reference20 articles.
1. Application-based review of GaN HFETs
2. History of GaN: High-Power RF Gallium Nitride (GaN) from Infancy to Manufacturable Process and Beyond
3. The 2018 GaN power electronics roadmap
4. Thermal analysis of AlGaN-GaN power HFETs
5. Transient stress characterization of AlGaN/GaN HEMTs due to electrical and thermal effects
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