Device and circuit performance of SiGe HBTs in 130nm BiCMOS process with f<inf>T</inf>/f<inf>MAX</inf> of 250/330GHz-Reference-Cited by-同舟云学术

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Device and circuit performance of SiGe HBTs in 130nm BiCMOS process with fT/fMAX of 250/330GHz

Published:2014-09 Issue: Volume: Page:
ISSN:
Container-title:2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)
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Author:

Jain Vibhor,Kessler T.,Gross B. J.,Pekarik J. J.,Candra P.,Gray P. B.,Sadhu B.,Valdes-Garcia A.,Cheng P.,Camillo-Castillo R. A.,Newton K.,Natarajan A.,Reynolds S. K.,Harame D. L.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6954699/6981265/06981294.pdf?arnumber=6981294

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Design of Single-Ended and Differential Power Amplifiers using SiGe HBT for SATCOM Applications;2023 IEEE Microwaves, Antennas, and Propagation Conference (MAPCON);2023-12-11

3. A Scalable Heterogeneous AiP Module for a 256-Element 5G Phased Array;2023 IEEE 73rd Electronic Components and Technology Conference (ECTC);2023-05

4. A 24–30-GHz 256-Element Dual-Polarized 5G Phased Array Using Fast On-Chip Beam Calculators and Magnetoelectric Dipole Antennas;IEEE Journal of Solid-State Circuits;2022-12

5. Performance Improvements of SiGe HBTs in 90nm BiCMOS Process with f_T/f_max of 340/410 GHz;2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2022-10-16

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