A band to band tunneling MOS device (B/sup 2/T-MOSFET)-a kind of 'Si quantum device'
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx2/713/1415/00032841.pdf?arnumber=32841
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5. GaAsSb/InGaAs double-gate vertical tunnel FET with a subthreshold slope of 56 mV dec−1 at room temperature;Japanese Journal of Applied Physics;2019-03-14
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