End of the road map: quest for beyond Si CMOS era-Reference-Cited by-同舟云学术

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End of the road map: quest for beyond Si CMOS era

Published:2023 Issue: Volume: Page:159-171
ISSN:
Container-title:Nanoelectronics : Physics, Materials and Devices
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Author:

Sharma Rajnish,Sharma Ashok Kumar,Sharma Santosh,Sharma Preeti

Publisher

Elsevier

Reference42 articles.

1. A theory of the electrical breakdown of solid dielectrics. (1934). Proceedings of the Royal Society of London. Series A, Containing Papers of a Mathematical and Physical Character, 145(855), 523–529. .

2. Controlling ambipolar current in tunneling FETs using overlapping gate-on-drain;Abdi;IEEE Journal of the Electron Devices Society,2014

3. Gate engineered heterostructure junctionless TFET with Gaussian doping profile for ambipolar suppression and electrical performance improvement;Aghandeh;Superlattices and Microstructures,2017

4. Band-to-band tunneling in carbon nanotube field-effect transistors;Appenzeller;Physical Review Letters,2004

5. Proposal for surface tunnel transistors;Baba;Japanese Journal of Applied Physics,1992

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Performance assessment of a new optimized Junctionless SiSn MOSFET;2023 20th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE);2023-10-25

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