Vertical scaling of ultra-high-speed AlInAs-GaInAs HEMTs
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx2/794/2489/00074238.pdf?arnumber=74238
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. RF characterization of 100-nm separate gate InAlAs/InGaAs DG-HEMT;Microwave and Optical Technology Letters;2013-08-26
2. An analytical charge-based drain current model for nano-scale In0.52Al0.48As–In0.53Ga0.47as a separated double-gate HEMT;Semiconductor Science and Technology;2010-10-04
3. Microwave performance enhancement in Double and Single Gate HEMT with channel thickness variation;Superlattices and Microstructures;2010-06
4. Modeling of hetero-interface potential and threshold voltage for tied and separate nanoscale InAlAs–InGaAs symmetric double-gate HEMT;Microelectronics Reliability;2009-12
5. Optimum design and fabrication of InAlAs/InGaAs HEMT's on GaAs with both high breakdown voltage and high maximum frequency of oscillation;IEEE Transactions on Electron Devices;1999-07
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