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RF characterization of 100-nm separate gate InAlAs/InGaAs DG-HEMT

  • Published:2013-08-26 Issue:11 Volume:55 Page:2796-2803
  • ISSN:0895-2477
  • Container-title:Microwave and Optical Technology Letters
  • language:en
  • Short-container-title:Microw. Opt. Technol. Lett.

Author:

Parveen 1,Gupta Mridula2,Gupta R. S.3,Jogi Jyotika1

Affiliation:

1. Microelectronics Research Laboratory; University of Delhi South Campus; New Delhi 110021 India

2. Semiconductor Device Research Laboratory, Department of Electronic Science; University of Delhi; South Campus New Delhi 110021 India

3. Department of Electronics and Communication Engineering; Maharaja Agrasen Institute of Technology; Sector-22, Rohini New Delhi 110086 India

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Ultra-short 25-nm-gate lattice matched InAlAs/InGaAs high electron mobility transistors within the range of 400 GHz cutoff frequency;Yamashita;IEEE Electron Device Lett,2001

2. A. Endoh Y. Yamashita M. Higashiwaki K. Hikosaka T. Mimura S. Hiyamizu T. Matsui t 2000 87 90

3. Extremely high-speed lattice matched InGaAs/InAlAs High Electron Mobility Transistors with 472 GHz Cutoff Frequency;Shinohara;Jpn J Appl Phys,2002

4. P.T. Greiling 1996 743 747

5. InP-based high electron mobility transistors with a very short gate-channel distance;Endoh;Jpn J Appl Phys,2003

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