A practical trench isolation technology with a novel planarization process-Reference-Cited by-同舟云学术

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A practical trench isolation technology with a novel planarization process

Published:1987 Issue: Volume: Page:
ISSN:
Container-title:1987 International Electron Devices Meeting
language:
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Author:

Fuse G.,Ogawa H.,Tateiwa K.,Nakao I.,Odanaka S.,Fukumoto M.,Iwasaki H.,Ohzone T.

Publisher

IRE

Link

http://xplorestaging.ieee.org/ielx5/9953/31997/01487493.pdf?arnumber=1487493

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Determining the Performance Limits of LDMOS With Three Common Types of Field Oxides;IEEE Transactions on Electron Devices;2024-04

2. CMOS/BiCMOS Technology;VLSI Technology;2003-03-19

3. Progress in device isolation technology;Microelectronics Reliability;2001-04

4. Differential Body Effect Analysis and Optimization of the LArge Tilt Implanted Sloped Shallow Trench Isolation Process (LATI-STI);Japanese Journal of Applied Physics;1996-08-01

5. Nearly bird's beak-free local oxidation technology for controlled dielectric formation in deep silicon trenches;Electronics Letters;1991

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