A model charge transport in thermal SiO/sub 2/ implanted with Si
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx2/713/1415/00032868.pdf?arnumber=32868
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Current-Voltage Hysteresis Characteristics in MOS Capacitors with Si-Implanted Oxide;IEICE Transactions on Electronics;2009
2. Memory devices obtained by Si+ irradiation through poly-Si/SiO2 gate stack;Journal of Physics: Conference Series;2005-01-01
3. Interface state density in n-MOSFETs with Si-implanted gate oxide measured by subthreshold slope analysis;Solid-State Electronics;1999-03
4. Study of the current–voltage characteristics in MOS capacitors with Si-implanted gate oxide;Solid-State Electronics;1999-03
5. Fowler–Nordheim tunneling in MOS capacitors with Si-implanted SiO2;Solid-State Electronics;1998-11
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