Current-Voltage Hysteresis Characteristics in MOS Capacitors with Si-Implanted Oxide-Reference-Cited by-同舟云学术

Current-Voltage Hysteresis Characteristics in MOS Capacitors with Si-Implanted Oxide

Published:2009 Issue:12 Volume:E92-C Page:1523-1530
ISSN:0916-8524
Container-title:IEICE Transactions on Electronics
language:en
Short-container-title:IEICE Trans. Electron.

Author:

MATSUDA Toshihiro¹,ISHIMARU Shinsuke¹,NOHARA Shingo¹,IWATA Hideyuki¹,KOMOKU Kiyotaka²,MORISHITA Takayuki²,OHZONE Takashi³

Affiliation:

1. Department of Information Systems Engineering, Toyama Prefectural University

2. Department of Communication Engineering, Okayama Prefectural University

3. Dawn Enterprise Co., LTD.

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://www.jstage.jst.go.jp/article/transele/E92.C/12/E92.C_12_1523/_pdf

Reference49 articles.

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2. [2] T. Hori, T. Ohzone, Y. Odake, and J. Hirase, “A MOSFET with Si-implanted gate-SiO₂ insulator for nonvolatile memory applications, ” IEDM Tech. Dig., pp.469-472, 1992.

3. [3] S. Tiwari, F. Rana, K. Chan, H. Hanafi, W. Chan, and D. Buchanan, “Volatile and non-volatile memories in silicon with nano-crystal storage, ” IEDM Tech. Dig., pp.521-524, 1995.

4. A silicon nanocrystals based memory

5. [5] T.H. Ning, “Silicon technology-emerging trends from a system application perspective, ” 2003 Symp. VLSI Technology, Dig. Tech. Papers, 2003.