Si/SiGe heterojunction bipolar transistors with current gains up to 5000-Reference-Cited by-同舟云学术

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Si/SiGe heterojunction bipolar transistors with current gains up to 5000

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Container-title:International Technical Digest on Electron Devices Meeting
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Author:

Schreiber H.,Bosch B.G.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx2/794/2489/00074362.pdf?arnumber=74362

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Simulation analysis of the DC current gain in an n-p-n a-Si:H/SiGe/Si heterojunction bipolar transistor;Microelectronics Journal;2004-05

2. Design considerations for a-Si:H/SiGe/Si heterojunction bipolar transistors;IEEE Transactions on Electron Devices;2003-10

3. High-speed self-aligned SiGe HBT and application to optical-fiber-link ICs;Electronics and Communications in Japan (Part II: Electronics);2002-06-18

4. Reactive ion etching of Si/SiGe in CF4/Ar and Cl2/BCl3/Ar discharges;Materials Chemistry and Physics;1999-07

5. SiGe HBTs and HFETs;Solid-State Electronics;1995-09

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