Simulation analysis of the DC current gain in an n-p-n a-Si:H/SiGe/Si heterojunction bipolar transistor-Reference-Cited by-同舟云学术

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Simulation analysis of the DC current gain in an n-p-n a-Si:H/SiGe/Si heterojunction bipolar transistor

Published:2004-05 Issue:5 Volume:35 Page:411-415
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Corte Francesco G.Della,Pezzimenti Fortunato

Publisher

Elsevier BV

Subject

General Engineering

Reference15 articles.

1. 75-GHz f SiGe-base heterojunction bipolar transistors;Patton;IEEE Electron Device Lett.,1990

2. High frequency Si/SiGe heterojunction bipolar transistors;Kamins;IEDM Tech. Dig.,1989

3. Current gain–early voltage product in SiGe base HBTs with thin a-Si:H emitters;Tang;Proc. Eur. Solid-State Device Res. Conf.,1994

4. SiGe heterojunction bipolar transistors with current gains up to 5000;Schreiber;IEDM Tech. Dig.,1989

5. High speed SiGe-HBT with very low base sheet resistivity;Kasper;IEDM Tech. Dig.,1993

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