Novel high performance self-aligned 0.15 micron long T-gate AlInAs-GaInAs HEMTs-Reference-Cited by-同舟云学术

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Novel high performance self-aligned 0.15 micron long T-gate AlInAs-GaInAs HEMTs

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Container-title:International Technical Digest on Electron Devices Meeting
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Author:

Mishra U.K.,Brown A.S.,Jelloian L.M.,Thompson M.,Nguyen L.D.,Rosenbaum S.E.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx2/794/2489/00074237.pdf?arnumber=74237

Cited by 52 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Unique Approach to Generate Self-Aligned T-Gate Transistors in Counter-Doped Poly-Si With High Etching Selectivity and Isotropy;IEEE Electron Device Letters;2020-03

2. A 2-D Modeling of Fe doped Dual Material Gate AlGaN/AlN/GaN High Electron Mobility Transistors for High Frequency Applications;AEU - International Journal of Electronics and Communications;2019-05

3. Modeling and simulation of dual‐material‐gate AlGaN/GaN high‐electron‐mobility transistor using finite difference method;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2019-01-23

4. A Self-Aligned InGaAs HEMT Architecture for Logic Applications;IEEE Transactions on Electron Devices;2010-01

5. Electron transport properties of MM-HEMT with varied channel indium contents;Acta Physica Sinica;2003

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