25.4 A 20nm 6GB Function-In-Memory DRAM, Based on HBM2 with a 1.2TFLOPS Programmable Computing Unit Using Bank-Level Parallelism, for Machine Learning Applications-Reference-Cited by-同舟云学术

25.4 A 20nm 6GB Function-In-Memory DRAM, Based on HBM2 with a 1.2TFLOPS Programmable Computing Unit Using Bank-Level Parallelism, for Machine Learning Applications

Published:2021-02-13 Issue: Volume: Page:
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Container-title:2021 IEEE International Solid- State Circuits Conference (ISSCC)
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Author:

Kwon Young-Cheon,Lee Suk Han,Lee Jaehoon,Kwon Sang-Hyuk,Ryu Je Min,Son Jong-Pil,Seongil O,Yu Hak-Soo,Lee Haesuk,Kim Soo Young,Cho Youngmin,Kim Jin Guk,Choi Jongyoon,Shin Hyun-Sung,Kim Jin,Phuah BengSeng,Kim HyoungMin,Song Myeong Jun,Choi Ahn,Kim Daeho,Kim SooYoung,Kim Eun-Bong,Wang David,Kang Shinhaeng,Ro Yuhwan,Seo Seungwoo,Song JoonHo,Youn Jaeyoun,Sohn Kyomin,Kim Nam Sung

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9365732/9365735/09365862.pdf?arnumber=9365862

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