16.1 A 22nm 4Mb 8b-Precision ReRAM Computing-in-Memory Macro with 11.91 to 195.7TOPS/W for Tiny AI Edge Devices-Reference-Cited by-同舟云学术

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16.1 A 22nm 4Mb 8b-Precision ReRAM Computing-in-Memory Macro with 11.91 to 195.7TOPS/W for Tiny AI Edge Devices

Published:2021-02-13 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE International Solid- State Circuits Conference (ISSCC)
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Author:

Xue Cheng-Xin,Hung Je-Min,Kao Hui-Yao,Huang Yen-Hsiang,Huang Sheng-Po,Chang Fu-Chun,Chen Peng,Liu Ta-Wei,Jhang Chuan-Jia,Su Chin-I,Khwa Win-San,Lo Chung-Chuan,Liu Ren-Shuo,Hsieh Chih-Cheng,Tang Kea-Tiong,Chih Yu-Der,Chang Tsung-Yung Jonathan,Chang Meng-Fan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9365732/9365735/09365769.pdf?arnumber=9365769

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