16.4 An 89TOPS/W and 16.3TOPS/mm2 All-Digital SRAM-Based Full-Precision Compute-In Memory Macro in 22nm for Machine-Learning Edge Applications-Reference-Cited by-同舟云学术

16.4 An 89TOPS/W and 16.3TOPS/mm2 All-Digital SRAM-Based Full-Precision Compute-In Memory Macro in 22nm for Machine-Learning Edge Applications

Published:2021-02-13 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE International Solid- State Circuits Conference (ISSCC)
language:
Short-container-title:

Author:

Chih Yu-Der¹,Lee Po-Hao¹,Fujiwara Hidehiro¹,Shih Yi-Chun¹,Lee Chia-Fu¹,Naous Rawan¹,Chen Yu-Lin¹,Lo Chieh-Pu¹,Lu Cheng-Han¹,Mori Haruki¹,Zhao Wei-Chang¹,Sun Dar¹,Sinangil Mahmut E.¹,Chen Yen-Huei¹,Chou Tan-Li¹,Akarvardar Kerem¹,Liao Hung-Jen¹,Wang Yih¹,Chang Meng-Fan¹,Chang Tsung-Yung Jonathan¹

Affiliation:

1. TSMC,Hsinchu,Taiwan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9365732/9365735/09365766.pdf?arnumber=9365766

Cited by 188 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An 8b-Precison 16-Kb FDSOI 8T SRAM CIM macro based on time-domain for energy-efficient edge AI devices;Microelectronics Journal;2024-09

2. Prospects and challenges of electrochemical random-access memory for deep-learning accelerators;Current Opinion in Solid State and Materials Science;2024-09

3. A 28-nm Floating-Point Computing-in-Memory Processor Using Intensive-CIM Sparse-Digital Architecture;IEEE Journal of Solid-State Circuits;2024-08

4. Scaling-CIM: eDRAM In-Memory-Computing Accelerator With Dynamic-Scaling ADC and Adaptive Analog Operation;IEEE Journal of Solid-State Circuits;2024-08

5. A Dual 7T SRAM-Based Zero-Skipping Compute- In-Memory Macro With 1-6b Binary Searching ADCs for Processing Quantized Neural Networks;IEEE Transactions on Circuits and Systems I: Regular Papers;2024-08