An 8b-Precison 16-Kb FDSOI 8T SRAM CIM macro based on time-domain for energy-efficient edge AI devices

Author:

Zhou Yongliang,Wei Yiming,Xiong Tianzhu,Zhou Zixuan,Yang Zhen,Lin Xiao,Hu Wei,Wu Xiulong,Peng ChunyuORCID

Publisher

Elsevier BV

Reference28 articles.

1. Circuit design challenges in computing-in-memory for AI edge devices;Si,2019

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3. A 41.2 nJ/class, 32-channel on-chip classifier for epileptic seizure detection;Taghavi,2018

4. 15.5 A 28nm 64Kb 6T SRAM computing-in-memory macro with 8b MAC operation for AI edge chips;Si,2020

5. 15.2 A 28nm 64Kb inference-training two-way transpose multibit 6T SRAM compute-in-memory macro for AI edge chips;Su,2020

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