Validation of a nonlinear transistor model by power spectrum characteristics of HEMT's and MESFET's

Author:

Angelov N.,Zirath H.,Rorsman A.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Cited by 36 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. A Fully Integrated $W$-Band Signal Source in 60/100-nm Si/AlGaN/GaN HEMT Technology;IEEE Transactions on Microwave Theory and Techniques;2024

2. A Nonlinear GaN HEMT Modeling with the gm2 and gm3 Validation;2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT);2022-10-25

3. Look-up table based I-V model for GaN HEMT devices for Microwave Applications;Microprocessors and Microsystems;2021-06

4. An Empirical Nonlinear Model for HEMT Devices based on the Gudermannian function;2020 International Conference on Microwave and Millimeter Wave Technology (ICMMT);2020-09-20

5. On the delay implementation in FET Large Signal Models;2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC);2020-07

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