CMOS Gate Driver with Integrated Ultra-Accurate and Fast Gate Charge Sensor for Robust and Ultra-Fast Short Circuit Detection of SiC power modules
Author:
Affiliation:
1. NXP SEMICONDUCTORS, LAPLACE, Université de Toulouse, CNRS, INPT, UPS,Toulouse,France
2. LAPLACE, Université de Toulouse, CNRS, INPT, UPS,Toulouse,France
3. NXP SEMICONDUCTORS,Toulouse,France
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10147163/10147396/10147567.pdf?arnumber=10147567
Reference5 articles.
1. Robustness study of a fast protection method based on the gate-charge dedicated for SiC MOSFETs power device
2. Development and Verification of Protection Circuit for Hard Switching Fault of SiC MOSFET by Using Gate-Source Voltage and Gate Charge
3. Analysis of short circuit type II and III of high voltage SiC MOSFETs with fast current source gate drive principle
4. CMOS Gate Driver with fast short circuit protection for SiC MOSFETs
5. An Improved Desaturation Protection Method with Self-Adaptive Blanking-Time for Silicon Carbide (SiC) Power MOSFETs
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. On the Damping of Ringing Affecting Power Transistors by Means of Active Gate Drivers;IEEE Transactions on Circuits and Systems I: Regular Papers;2024-04
2. Fully Integrated Overcurrent Protection Method During SiC MOSFET Conduction;2023 IEEE 8th Southern Power Electronics Conference and 17th Brazilian Power Electronics Conference (SPEC/COBEP);2023-11-26
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