Author:
Barazi Yazan,Richardeau Frédéric,Rouger Nicolas,Blaquière Jean-Marc
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. Silicon Carbide Power Devices;Baliga,2005
2. Design and Performance Evaluation of Overcurrent Protection Schemes for Silicon Carbide (SiC) Power MOSFETs;Wang,2014
3. Influence of design parameters on the short-circuit ruggedness of SiC power MOSFETs;Romano,2016
4. A smart IGBT gate driver IC with temperature compensated collector current sensing;Chen;IEEE Trans. Power Electron.,2019
5. Short-circuit protection circuits for silicon-carbide power transistors;Sadik;IEEE Trans. Ind. Electron.,1995
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献