Performance Limit Projection of Germanane Field-Effect Transistors
Author:
Funder
NSERC Discovery
NSERC Strategic Project
WIN Nano fellowship
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/7909048/07876818.pdf?arnumber=7876818
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2. Single-Layer InGeS: Robust direct Bandgap, super high electron Mobility, long-lived Carriers, and Ohmic contact for Next-Generation Field-Effect transistors;Chemical Physics;2024-10
3. 2D Material-Based MVS Model and Circuit Performance Analysis for GeH Field-Effect Transistors;IEEE Transactions on Nanotechnology;2023
4. A Multi-Level Simulation of GeH FETs: From Nanomaterial and Device Characteristics to Circuit Performance Optimization;Proceedings of the 17th ACM International Symposium on Nanoscale Architectures;2022-12-07
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