A Multi-Level Simulation of GeH FETs: From Nanomaterial and Device Characteristics to Circuit Performance Optimization
Author:
Affiliation:
1. Electrical and Computer Engineering, University of Waterloo, Waterloo, Canada
2. Waterloo Institute for Nanotechnology, Waterloo, Canada
Funder
NSERC Discovery Grant
Ontario Early Researcher Award
Publisher
ACM
Link
https://dl.acm.org/doi/pdf/10.1145/3565478.3572533
Reference17 articles.
1. Performance Limit Projection of Germanane Field-Effect Transistors
2. A highly sensitive chemical gas detecting transistor based on highly crystalline CVD-grown MoSe2 films
3. Stability and Exfoliation of Germanane: A Germanium Graphane Analogue
4. All Two-Dimensional, Flexible, Transparent, and Thinnest Thin Film Transistor
5. Quantum Transport: Atom to Transistor
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