Improved Hysteresis and Reliability of MoS2Transistors With High-Quality CVD Growth and Al2O3Encapsulation-Reference-Cited by-同舟云学术

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Improved Hysteresis and Reliability of MoS2Transistors With High-Quality CVD Growth and Al2O3Encapsulation

Published:2017-12 Issue:12 Volume:38 Page:1763-1766
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Illarionov Yury Yu.^ORCID,Smithe Kirby K. H.^ORCID,Waltl Michael^ORCID,Knobloch Theresia^ORCID,Pop Eric^ORCID,Grasser Tibor

Funder

FWF

NSF EFRI 2-DARE

AFOSR

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://ieeexplore.ieee.org/ielaam/55/8103303/8093661-aam.pdf

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3. Vertically grown metal nanosheets integrated with atomic-layer-deposited dielectrics for transistors with subnanometre capacitance-equivalent thicknesses;Nature Electronics;2024-07-08

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