Vertically grown metal nanosheets integrated with atomic-layer-deposited dielectrics for transistors with subnanometre capacitance-equivalent thicknesses
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Publisher
Springer Science and Business Media LLC
Link
https://www.nature.com/articles/s41928-024-01202-3.pdf
Reference52 articles.
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3. Jiang, J. Ballistic two-dimensional InSe transistors. Nature 616, 470–475 (2023).
4. Liu, Y. et al. Promises and prospects of two-dimensional transistors. Nature 591, 43–53 (2021).
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