Design of SEL Self-Recovery Hardness for 90nm COTS Devices Using R-C-S Network with DC-DC Converter
Author:
Affiliation:
1. Chinese Academy of Sciences University of Chinese Academy of Sciences,State Key Laboratory of Space Weather, National Space Science Center,Beijing,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10090225/10090247/10090280.pdf?arnumber=10090280
Reference14 articles.
1. Laser SEE Sensitivity Mapping of SRAM Cells
2. Comparison between SRAM SEE cross-sections from ion beam testing with those obtained using a new picosecond pulsed laser facility
3. Laser SEL sensitivity mapping of SRAM cells
4. Circuit-Level Simulation of the Single Event Transients in an On-Chip Single Event Latchup Protection Switch
5. Latent damage in CMOS devices from single-event latchup
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