Manufacturability demonstration of an integrated SiGe HBT technology for the analog and wireless marketplace-Reference-Cited by-同舟云学术

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Manufacturability demonstration of an integrated SiGe HBT technology for the analog and wireless marketplace

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Container-title:International Electron Devices Meeting. Technical Digest
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Ahlgren D.C.,Gilbert M.,Greenberg D.,Jeng J.,Malinowski J.,Nguyen-Ngoc D.,Schonenberg K.,Stein K.,Groves R.,Walter K.,Hueckel G.,Colavito D.,Freeman G.,Sunderland D.,Harame D.L.,Meyerson B.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx3/4251/12029/00554115.pdf?arnumber=554115

Cited by 59 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ge/GaAs Hetero-structured n-p-n Transistor;2022 IEEE 31st Microelectronics Design & Test Symposium (MDTS);2022-05-23

2. SiGe HBTs with ${f_{T}/f_{\max}\,\sim\,375/510GHz}$ Integrated in 45nm PDSOI CMOS;2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2021-12-05

3. Non-TMR SEU-Hardening Techniques for SiGe HBT Shift Registers and Clock Buffers;IEEE Transactions on Nuclear Science;2010-08

4. Integrated Silicon Optoelectronics;Springer Series in Optical Sciences;2010

5. A novel device structure using a shared-subcollector, cascoded inverse-mode SiGe HBT for enhanced radiation tolerance;2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting;2009-10

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