Modeling of polysilicon diffusion sources
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/878/6081/00237095.pdf?arnumber=237095
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Impact of Carbon Doping on Polysilicon Grain Size Distribution and Yield Enhancement for 40-nm Embedded Nonvolatile Memory Technology;IEEE Transactions on Device and Materials Reliability;2018-03
2. Modeling of Boron Diffusion and Segregation in Poly-Si/4H-SiC Structures;Materials Science Forum;2010-04
3. Dynamics of p+ polysilicon gate depletion due to the formation of boron compounds in TiSi2;Simulation of Semiconductor Processes and Devices 2001;2001
4. Characteristics of Boron Diffusion in Polysilicon/Silicon Systems with a Thin Si‐B Layer as Diffusion Source;Journal of The Electrochemical Society;1995-02-01
5. A mass conserving moving grid method for dopant simulation;Mathematical Modelling and Simulation of Electrical Circuits and Semiconductor Devices;1994
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