Dynamics of p+ polysilicon gate depletion due to the formation of boron compounds in TiSi2
Author:
Lau F. G.,Molzer W.
Publisher
Springer Vienna
Reference6 articles.
1. A. Kalnitsky, N. Brun, A. Brun, and J.-P. Gonchond. TiSi2 integration in a submicron cmos process. ii. integration issues. J. Electrochem. Soc. 142(6):1992–1996, 1995.
2. V. Probst, H. Schaber, A. Mitwaisky, H. Kabza, B. Hoffmann, K. Maex, and L. van den Hove. Metal-dopant-compound formation in TiSi2 and TaSi2: Impact on dopant diffusion and contact resistance. J. Appl. Phys. 70(2):693–707, July 1991.
3. F. Lau. Modeling of polysilicon diffusion sources. In International Electron Devices Meeting, Technical Digest pages 737–740, December 1990.
4. F. Lau. Modeling of polysilicon diffusion sources during rapid optical annealing. Applied Physics A (Solids and Surfaces) 54(2):139–146, 1992.
5. S. Batra, K.H. Park, S.K. Banerjee, G.E. Lux, C.L. Kirschbaum, J.C. Norberg, T.C. Smith, J.K. Elliott, and B.J. Mulvaney. Effect of grain microstructure on p diffusion in polycrystalline-on-single crystal silicon systems. Journal of Electronic Materials 21(2):227–231, 1992.