A new degradation mode of scaled p/sup +/ polysilicon gate pMOSFETs induced by bias temperature (BT) instability-Reference-Cited by-同舟云学术

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A new degradation mode of scaled p/sup +/ polysilicon gate pMOSFETs induced by bias temperature (BT) instability

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Container-title:Proceedings of International Electron Devices Meeting
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Author:

Uwasawa K.,Yamamoto T.,Mogami T.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx3/3584/10696/00499355.pdf?arnumber=499355

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