Hydrogen degradation in InP HEMTs-Reference-Cited by-同舟云学术

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Hydrogen degradation in InP HEMTs

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Container-title:International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217)
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Author:

Blanchard R.R.,del Alamo J.A.,Chao P.C.,Adams S.B.

Publisher

IEEE

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Hydrogen on Electrical Performance of Pt/Au β-Ga₂O₃ (001) Schottky Barrier Diodes;IEEE Transactions on Electron Devices;2023-05

2. Degradation Behavior and Mechanism of E-mode Cascode GaN HEMTs under Hydrogen Environment;2023 International Conference on Power Energy Systems and Applications (ICoPESA);2023-02-24

3. Towards Understanding the Interaction Between Hydrogen Poisoning and Bias Stress in AlGaN/GaN MIS-HEMTs With SiNx Gate Dielectric;IEEE Electron Device Letters;2021-02

4. Direct evidence of hydrogen interaction with carbon: C–H complex in semi-insulating GaN;Applied Physics Letters;2020-06-29

5. Hydrogen effects on AlGaN/GaN MISFET with LPCVD-SiNx gate dielectric;Semiconductor Science and Technology;2019-02-18

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