Direct evidence of hydrogen interaction with carbon: C–H complex in semi-insulating GaN-Reference-Cited by-同舟云学术

Direct evidence of hydrogen interaction with carbon: C–H complex in semi-insulating GaN

Published:2020-06-29 Issue:26 Volume:116 Page:262101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wu Shan¹,Yang Xuelin¹²^ORCID,Zhang Qing³^ORCID,Shang Qiuyu³,Huang Huayang¹,Shen Jianfei¹,He Xiaoguang¹,Xu Fujun¹^ORCID,Wang Xinqiang¹²⁴^ORCID,Ge Weikun¹,Shen Bo¹²⁴

Affiliation:

1. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, People's Republic of China

2. Nano-Optoelectronics Frontier Center of Ministry of Education, Peking University, Beijing 100871, People's Republic of China

3. Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, People's Republic of China

4. Collaborative Innovation Center of Quantum Matter, Beijing 100871, People's Republic of China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Key Research and Development Program of Guangdong Province

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0010757

Reference33 articles.

1. Entropy-Driven Stabilization of a Novel Configuration for Acceptor-Hydrogen Complexes in GaN

2. HYDROGEN IN SEMICONDUCTORS

3. Electronic level of interstitial hydrogen in GaAs

4. R. R. Blanchard , J. A. del Alamo , P. C. Chao , and S. B. Adams , in IEEE IEDM (1998), pp. 231–234.

5. Dissociation of H-related defect complexes in Mg-doped GaN

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Sub-bandgap excited photoluminescence probing of deep defect complexes in GaN doped by Si, Ge and C impurities;Semiconductor Science and Technology;2024-09-12

2. First Demonstration of Extrinsic C-Doped Semi-Insulating N-Polar GaN Using Propane Precursor Grown on Miscut Sapphire Substrate by MOCVD;Crystals;2023-10-01

3. Nitrogen vacancies in GaN templates and their critical role on the luminescence efficiency of blue quantum wells;Optics Express;2023-04-20

4. Identification of carbon location in p-type GaN: Synchrotron x-ray absorption spectroscopy and theory;Applied Physics Letters;2022-12-19

5. On the Origin of the Yellow Luminescence Band in GaN;physica status solidi (b);2022-12-03