Reproducible high field effect mobility polysilicon thin film transistors involving pulsed Nd:YVO/sub 4/ laser crystallization-Reference-Cited by-同舟云学术

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Reproducible high field effect mobility polysilicon thin film transistors involving pulsed Nd:YVO/sub 4/ laser crystallization

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Container-title:International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318)
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Author:

Helen Y.,Dassow R.,Mourgues K.,Bonnaud O.,Mohammed-Brahim T.,Raoult F.,Koehler J.R.,Werner J.H.,Lemoine D.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6669/17838/00824155.pdf?arnumber=824155

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2. (Invited) Twenty Five Years of Improvement of the Silicon Based TFT: From As-Deposited Polycrystalline Silicon to Nanostructured Silicon Deposited at Very Low Temperature;ECS Transactions;2013-03-15

3. On-State Drain Current Modeling of Large-Grain Poly-Si TFTs Based on Carrier Transport Through Latitudinal and Longitudinal Grain Boundaries;IEEE Transactions on Electron Devices;2005-08

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