AlInAs/GaInAs/InP double heterojunction bipolar transistor with a novel base-collector design for power applications
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx3/3584/10696/00499338.pdf?arnumber=499338
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Physical origins of nonlinearity in InP double heterojunction bipolar transistors;Applied Physics Letters;2012-03-12
2. Base charge accumulation and push-out effects on nonlinearity of Type-I InP/InGaAs/InP and Type-I/II AlInP/GaAsSb/InP double heterojunction bipolar transistors;Journal of Applied Physics;2011-12
3. Heterogeneous Integration of Compound Semiconductors;Annual Review of Materials Research;2010-06-01
4. The state-of-the-art of GaAs and InP power devices and amplifiers;IEEE Transactions on Electron Devices;2001-03
5. Reliability of III–V based heterojunction bipolar transistors;Microelectronics Reliability;1998-02
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