High-reliability InGaP/GaAs HBTs fabricated by self-aligned process-Reference-Cited by-同舟云学术

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High-reliability InGaP/GaAs HBTs fabricated by self-aligned process

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Container-title:Proceedings of 1994 IEEE International Electron Devices Meeting
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Author:

Takahashi T.,Sasa S.,Kawano A.,Iwai T.,Fujii T.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx2/3058/8678/00383433.pdf?arnumber=383433

Cited by 49 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Accurate and efficient analysis of the upward heat flow in InGaP/GaAs HBTs through an automated FEM‐based tool and Design of Experiments;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2018-11-28

2. Simulation comparison of InGaP/GaAs HBT thermal performance in wire-bonding and flip-chip technologies;Microelectronics Reliability;2017-11

3. Elastic properties of GaxIn1−xP semiconductor;Physica B: Condensed Matter;2011-12

4. Thermal reliability of VCO using InGaP/GaAs HBTs;Microelectronics Reliability;2011-12

5. A Composite Transistor to Suppress Kink Phenomenon in HBTs for Broadband Design;IEEE Electron Device Letters;2010-10

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