Assessment of charge-induced damage to ultra-thin gate MOSFETs-Reference-Cited by-同舟云学术

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Assessment of charge-induced damage to ultra-thin gate MOSFETs

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Container-title:International Electron Devices Meeting. IEDM Technical Digest
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Author:

Krishnan S.,Rangan S.,Hattangady S.,Xing G.,Brennan K.,Rodder M.,Ashok S.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx3/5237/14153/00650420.pdf?arnumber=650420

Cited by 28 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Observation of Plasma-Induced Damage in Bulk Germanium ${p}$ -Type FinFET Devices and Curing in High-Pressure Anneal;IEEE Transactions on Device and Materials Reliability;2019-06

2. Review on the reliability characterization of plasma-induced damage;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2009

3. An Optimal Jumper-Insertion Algorithm for Antenna Avoidance/Fixing;IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems;2007-10

4. An Exact Jumper-Insertion Algorithm for Antenna Violation Avoidance/Fixing Considering Routing Obstacles;IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems;2007-04

5. Full-Chip Nanometer Routing Techniques;ANALOG CIRC SIG PROC;2007

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