Epitaxial SiGeC/Si photodetector with response in the 1.3-1.55 μm wavelength range-Reference-Cited by-同舟云学术

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Epitaxial SiGeC/Si photodetector with response in the 1.3-1.55 μm wavelength range

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Container-title:International Electron Devices Meeting. Technical Digest
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Author:

Huang F.Y.,Thomas S.G.,Chu M.,Wang K.L.,Theodore N.D.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx3/4251/12029/00554069.pdf?arnumber=554069

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. SOI-LEDs with Carrier Confinement;Materials Science Forum;2008-08

2. A new design of the SiC light-activated Darlington power transistor;Microelectronic Engineering;2006-01

3. Hetero-epitaxial growth of SiCGe on SiC;Microelectronic Engineering;2006-01

4. The effect of native oxide on epitaxial SiGe from deposited amorphous Ge on Si;Applied Physics Letters;1999-01-25

5. High-speed optoelectronics receivers in SiGe;17th International Conference on VLSI Design. Proceedings.

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