A T-gate overlapped LDD device with high circuit performance and high reliability
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/606/6055/00235337.pdf?arnumber=235337
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Performance Improvement Induced by Metal Gate Undercut for Ring Oscillator;IEEE Electron Device Letters;2023-06
2. An analytical model for the effect of graded gate oxide on the channel electric field in MOSFETs with lightly doped drain structure;Solid-State Electronics;1997-04
3. Charge-pumping characteristics of virgin and stressed lightly-doped drain MOSFETs;Solid-State Electronics;1995-04
4. A novel hot carrier reliability monitor for LDD p-MOSFETs;Solid-State Electronics;1994-12
5. Comparison of gate-edge effects on the hot-carrier induced degradation of LDD N- and P-channel MOSFETs;Solid-State Electronics;1994-01
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