Efficient Modeling of Charge Trapping at Cryogenic Temperatures—Part I: Theory-Reference-Cited by-同舟云学术

Efficient Modeling of Charge Trapping at Cryogenic Temperatures—Part I: Theory

Published:2021-12 Issue:12 Volume:68 Page:6365-6371
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Michl Jakob^ORCID,Grill Alexander^ORCID,Waldhoer Dominic^ORCID,Goes Wolfgang,Kaczer Ben^ORCID,Linten Dimitri,Parvais Bertrand^ORCID,Govoreanu Bogdan,Radu Iuliana^ORCID,Waltl Michael^ORCID,Grasser Tibor^ORCID

Funder

imec’s Industrial Affiliation Program on Quantum Computing and Cryoelectronics

Austrian Research Promotion Agency FFG

European Union’s Horizon 2020 Research and Innovation Program, within the framework of the project Modeling Unconventional Nanoscaled DeviceFABrication

Austrian Federal Ministry for Digital and Economic Affairs

Österreichische Nationalstiftung für Forschung, Technologie und Entwicklung

Christian Doppler Forschungsgesellschaft

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9632442/09590558.pdf?arnumber=9590558

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