Passivation Schemes for ScAlN-Barrier mm-Wave High Electron Mobility Transistors
Author:
Affiliation:
1. Raytheon Technologies, Andover, MA, USA
2. Naval Research Laboratory, Washington, DC, USA
3. Raytheon, Andover, MA, USA
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9722602/09684017.pdf?arnumber=9684017
Reference27 articles.
1. Self-aligned N-polar GaN/InAlN MIS-HEMTs with record extrinsic transconductance of 1105 mS/mm;dasgupta;IEEE Electron Device Lett,2012
2. N-Polar InAlN/AlN/GaN MIS-HEMTs
3. N-polar GaN/InAlN/AlGaN MIS-HEMTs with 1.89 S/mm extrinsic transconductance, 4 A/mm drain current, 204 GHz fT and 405 GHz fmax
4. N-Polar GaN MIS-HEMTs on Sapphire With High Combination of Power Gain Cutoff Frequency and Three-Terminal Breakdown Voltage
5. AlN/GaN Insulated-Gate HEMTs With 2.3 A/mm Output Current and 480 mS/mm Transconductance
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