Simulation Study on Single-Event Burnout in Rated 1.2-kV 4H-SiC Super-Junction VDMOS-Reference-Cited by-同舟云学术

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Simulation Study on Single-Event Burnout in Rated 1.2-kV 4H-SiC Super-Junction VDMOS

Published:2021-10 Issue:10 Volume:68 Page:5034-5040
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Yu Cheng-Hao^ORCID,Wang Ying^ORCID,Bao Meng-Tian,Li Xing-Ji^ORCID,Yang Jian-Qun,Tang Zhao-Huan

Funder

National Natural Science Foundation of China

Zhejiang Provincial Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9546692/09512272.pdf?arnumber=9512272

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Preparation and oxidation characteristics of Si layers grown on 4H–SiC substrates;Vacuum;2024-09

2. Transient behaviour analysis in silicon carbide alpha particle detector using TCAD and SRIM simulation;Physica Scripta;2024-06-11

3. A Brief Review of Single-Event Burnout Failure Mechanisms and Design Tolerances of Silicon Carbide Power MOSFETs;Electronics;2024-04-09

4. An Improved Single-Event Effect Performance SiC MOSFET of Hole Extraction Pillar Combined With Multilayer P-Shield Structure;IEEE Transactions on Electron Devices;2024-02

5. Experimental Investigation and Hardening of Single-Event Gate Rupture in 100-V Spl-Gate Trench VDMOS;IEEE Transactions on Nuclear Science;2024-01

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