Steep-Switching Fully Depleted Silicon-on-Insulator (FDSOI) Phase-Transition Field-Effect Transistor With Optimized HfO₂/Al₂O₃-Multilayer-Based Threshold Switching Device-Reference-Cited by-同舟云学术

Steep-Switching Fully Depleted Silicon-on-Insulator (FDSOI) Phase-Transition Field-Effect Transistor With Optimized HfO₂/Al₂O₃-Multilayer-Based Threshold Switching Device

Published:2021-03 Issue:3 Volume:68 Page:1358-1363
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Han Sangwoo,Jeong Sojin,Shin Jaemin^ORCID,Shin Changhwan^ORCID

Funder

Future Semiconductor Device Technology Development Program funded by the Ministry of Trade Industry and Energy MOTIE and the Korea Semiconductor Research Consortium KSRC

National Research Foundation of Korea NRF through a grant funded by the Korean Government MSIP

Competency Development Program for Industry Specialists of the Korean Ministry of Trade Industry and Energy MOTIE operated by Korea Institute for Advancement of Technology KIAT

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9361759/09344614.pdf?arnumber=9344614

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