Funder
Research and Application of Key Technologies of GaN-Based Power Devices on Si Substrate through the Key-Area Research and Development Program of Guangdong Province
Research on Key Technologies for Optimization of IoT Chips and Product Development through the Key-Area Research and Development Program of Guangdong Province
Study and Optimization of Electrostatic Discharge Mechanism for GaN HEMT Devices
Research of AlGaN HEMT MEMS Sensor for Work in Extreme Environment
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by
5 articles.
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