Hybrid Electrothermal Simulations of GaN HEMT Devices Based on Self-Heating Free Virtual Electrical Characteristics-Reference-Cited by-同舟云学术

Hybrid Electrothermal Simulations of GaN HEMT Devices Based on Self-Heating Free Virtual Electrical Characteristics

Published:2021-08 Issue:8 Volume:68 Page:3740-3747
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Valletta Antonio^ORCID,Mussi Valentina^ORCID,Rapisarda Matteo^ORCID,Lucibello Andrea,Natali Marco,Peroni Marco,Lanzieri Claudio,Fortunato Guglielmo,Mariucci Luigi^ORCID

Funder

Di Simulazione integrato elettromagnetico termico e fiSico per l’ottimizzazione delle preStazioni in dispositivi di POtenza a semiconduttori (DISSIPO) Project “KETs-Tecnologie abilitanti,” Lazio

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9493680/09451550.pdf?arnumber=9451550

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1. Understanding of multiway heat extraction using peripheral diamond in an AlGaN/GaN high electron mobility transistor by electrothermal simulations;Semiconductor Science and Technology;2024-06-07

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3. Thermal Characterization and Management of GaN-on-SiC High Power Amplifier MMIC;2023 IEEE 73rd Electronic Components and Technology Conference (ECTC);2023-05

4. Degradation Prediction of GaN HEMTs under Hot-Electron Stress Based on ML-TCAD Approach;Electronics;2022-11-02

5. Active Thermal Management of GaN-on-SiC HEMT With Embedded Microfluidic Cooling;IEEE Transactions on Electron Devices;2022-10