Self-Heating and Thermal Network Model for Complementary FET-Reference-Cited by-同舟云学术

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Self-Heating and Thermal Network Model for Complementary FET

Published:2022-01 Issue:1 Volume:69 Page:11-16
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Zhao Songhan^ORCID,Cai Linlin^ORCID,Chen Wangyong^ORCID,He Yandong^ORCID,Du Gang^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9664642/09633122.pdf?arnumber=9633122

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Statistical analysis of vertically stacked nanosheet complementary FET based on polycrystalline silicon with multiple grain boundaries;Results in Physics;2024-08

2. Self-Heating Effect of Device-Circuit with Back-side Power Delivery Network beyond 3nm Node;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

3. Multiphysics Simulation of Self-Heating-Induced Thermal Stress Effects on Quantum Transport in Gate-All-Around Nanosheet Field Effect Transistors;IEEE Transactions on Electron Devices;2024

4. Insight Into Electromigration Reliability of Buried Power Rail With Alternative Metal Material;IEEE Transactions on Electron Devices;2024-01

5. A Buried Thermal Rail (BTR) Technology to Improve Electrothermal Characteristics of Complementary Field-Effect Transistor (CFET);Micromachines;2023-09-07

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