Analysis of Charge Transfer Potential Barrier in Pinned Photodiode of CMOS Image Sensors
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9439211/09406198.pdf?arnumber=9406198
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Incomplete charge transfer in CMOS image sensor caused by Si/SiO2 interface states in the TG channel;Journal of Semiconductors;2023-11-01
2. Analytical Modeling of Charge Behavior in Pinned Photodiode for CMOS Image Sensors;IEEE Sensors Journal;2023-07-01
3. Study on optimization of image lag process based on 4T CMOS image sensor;2023 IEEE 3rd International Conference on Information Technology, Big Data and Artificial Intelligence (ICIBA);2023-05-26
4. Mathematical model of potential distribution in a pinned photodiode of an indirect time of flight CMOS image sensor;Applied Optics;2023-03-20
5. An All-Day Attitude Sensor Integrating Stars and Sun Measurement Based on Extended Pixel Response of CMOS APS Imager;IEEE Transactions on Instrumentation and Measurement;2023
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