Fully depleted, back-illuminated charge-coupled devices fabricated on high-resistivity silicon-Reference-Cited by-同舟云学术

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Fully depleted, back-illuminated charge-coupled devices fabricated on high-resistivity silicon

Published:2003-01 Issue:1 Volume:50 Page:225-238
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:en
Short-container-title:IEEE Trans. Electron Devices

Author:

Holland S.E.,Groom D.E.,Palaio N.P.,Stover R.J.,Mingzhi Wei

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/26588/01185186.pdf?arnumber=1185186

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