Influence of Channel Thickness on Analog and RF Performance Enhancement of an Underlap DG AlGaN/GaN based MOS-HEMT Device-Reference-Cited by-同舟云学术

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Influence of Channel Thickness on Analog and RF Performance Enhancement of an Underlap DG AlGaN/GaN based MOS-HEMT Device

Published:2019-03 Issue: Volume: Page:
ISSN:
Container-title:2019 Devices for Integrated Circuit (DevIC)
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Author:

Roy Akash,Mitra Rajrup,Kundu Atanu

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8766339/8783209/08783865.pdf?arnumber=8783865

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of Device Length on Analog Performances of a Normally-Off Underlapped AlGaN/GaN-based Double Gate MOS-HEMT Device;2024 5th International Conference on Recent Trends in Computer Science and Technology (ICRTCST);2024-04-09

2. Influence of Buffer Length and Mole Fraction on Analog Performances of a Symmetrical Underlapped DG Si/SiGe-based MOS-HEMT Device;2024 IEEE 3rd International Conference on Control, Instrumentation, Energy & Communication (CIEC);2024-01-25

3. Drain Current Characteristics of 6 H-SiC MESFET with Un-Doped and Recessed Area under the Gate: A Simulation Study;Transactions on Electrical and Electronic Materials;2024-01-13

4. Analytical Comparison of Analog/RF Performance of DG InAlGaN/GaN based MOS-HEMTsfor GaN width variation;2023 IEEE 2nd International Conference on Industrial Electronics: Developments & Applications (ICIDeA);2023-09-29

5. Multigate MOS-HEMT;HEMT Technology and Applications;2022-06-24

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