PSP-based compact FinFET model describing dc and RF measurements-Reference-Cited by-同舟云学术

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PSP-based compact FinFET model describing dc and RF measurements

Published:2006 Issue: Volume: Page:
ISSN:
Container-title:2006 International Electron Devices Meeting
language:
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Author:

Smit G.D.J.,Scholten A.J.,Serra N.,Pijper R.M.T.,van Langevelde R.,Mercha A.,Gildenblat G.,Klaassen D.B.M.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4154162/4139311/04154425.pdf?arnumber=4154425

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Derivation of a Universal Charge Model for Multigate MOS Structures With Arbitrary Cross Sections;IEEE Transactions on Electron Devices;2022-06

2. RF modeling of 40-nm SOI triple-gate FinFET;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2014-10-16

3. Analysis of flicker and thermal noise in p-channel Underlap DG FinFET;Microelectronics Reliability;2014-08

4. Analytical modeling of flicker noise in DG-FinFETs with multi-layered nitrided high-κ gate dielectric;Solid-State Electronics;2013-07

5. Modeling of noise for p-channel DG-FinFETs;Microelectronics Reliability;2012-06

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