A novel stack capacitor cell for high density FeRAM compatible with CMOS logic-Reference-Cited by-同舟云学术

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A novel stack capacitor cell for high density FeRAM compatible with CMOS logic

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Container-title:Digest. International Electron Devices Meeting,
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Author:

Hayashi T.,Igarashi Y.,Inomata D.,Ichimori T.,Mitsuhashi T.,Ashikaga K.,Ito T.,Yoshimaru M.,Nagata M.,Mitarai S.,Godaiin H.,Nagahama T.,Isobe C.,Moriya H.,Shoji M.,Ito Y.,Kuroda H.,Sasaki M.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/8330/25999/01175899.pdf?arnumber=1175899

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Annealing on Morphological, Structural and Electrical Characteristics of Zinc Oxide Layer for RRAM Applications;ECS Journal of Solid State Science and Technology;2022-03-01

2. Effects of X-ray accelerating voltage on electrical properties and reliability for ferroelectric random-access memory (FeRAM);Applied Physics Express;2022-02-09

3. A tunable ferroelectric based unreleased RF resonator;Microsystems & Nanoengineering;2020-01-13

4. Phase Change Memory: From Devices to Systems;Synthesis Lectures on Computer Architecture;2011-11-30

5. INTERFACE ENGINEERING IN RESISTIVE SWITCHING MEMORIES;Journal of Advanced Dielectrics;2011-04

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