High density and low power design of MRAM-Reference-Cited by-同舟云学术

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High density and low power design of MRAM

Published: Issue: Volume: Page:
ISSN:
Container-title:IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004.
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Author:

Hung C.C.,Kao M.J.,Chen Y.S.,Wang Y.H.,Hsu H.H.,Chen C.M.,Lee Y.J.,Chen W.C.,Lee J.Y.,Chen W.S.,Lin W.C.,Shen K.H.,Wei J.R.,Wang L.C.,Chen K.L.,Chao S.,Tang D.D.,Tsai M.-J.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/9719/30682/01419225.pdf?arnumber=1419225

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The floating body effect of a WSe₂ transistor with volatile memory performance;Materials Horizons;2022

2. Ultra-Low Power Scaled III-V-on-Si 1T-DRAMs With Quantum Well Heterostructures;2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS);2020-09-01

3. Capacitor-less dynamic random access memory based on a III–V transistor with a gate length of 14 nm;Nature Electronics;2019-08-19

4. Embedded Non-Volatile Memory Technologies;ECS Transactions;2011-03-21

5. Low-Power Switching of Nonvolatile Resistive Memory Using Hafnium Oxide;Japanese Journal of Applied Physics;2007-04-24

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