Intrinsic Origin of Electron Mobility Reduction in High-k MOSFETs - From Remote Phonon to Bottom Interface Dipole Scattering
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx5/4418847/4418848/04418864.pdf?arnumber=4418864
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1. Review on remote phonon scattering in transistors with metal-oxide-semiconductor structures adopting high-k gate dielectrics;Journal of Vacuum Science & Technology B;2023-11-02
2. Remote Phonon Scattering in InGaZnO Thin-Film Transistor with Double-Layered High-κ Gate Dielectric;Journal of Electronic Materials;2023-09-13
3. Outstanding High Field‐Effect Mobility of 299 cm2 V−1 s−1 by Nitrogen‐Doped SnO2 Nanosheet Thin‐Film Transistor;Advanced Materials Technologies;2023-01-29
4. Theoretical Study of Electronic Transport in Two-Dimensional Transition Metal Dichalcogenides: Effects of the Dielectric Environment;Physical Review Applied;2022-11-18
5. High channel mobility of 3C-SiC n-MOSFETs with gate stacks formed at low temperature—the importance of Coulomb scattering suppression;Applied Physics Express;2022-06-23
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